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Hidden structure revealed in characteristics of transistor laser
Posted on Sunday, April 09, 2006 @ 13:12:43 GMT by vlad

Science The transistor laser, invented by scientists at the University of Illinois at Urbana-Champaign, has been full of surprises. Researchers recently coaxed the device to reveal fundamental properties of the transistor, and of the transistor laser, moving it a step closer to commercialization.

As reported in the April 3 issue of the journal Applied Physics Letters, Nick Holonyak Jr., Milton Feng, and colleagues at the U. of I. explored the current-voltage relationship in a transistor laser. During stimulated emission, the laser light allowed the scientists to see into the device and study its elusive electronic structure...


"We were able to look at the transistor's operating characteristics, look inside of the transistor, and see features and behaviors that we couldn't see before," said Holonyak, a John Bardeen Chair Professor of Electrical and Computer Engineering and Physics. "The current-voltage characteristics were clearly distorted under stimulated recombination, compared to ordinary 58-year-old-transistor spontaneous recombination."

The transistor laser employs a quantum well and a resonator in the base to control electron-hole recombination and electrical gain. By blocking the laser resonator with white paste, the researchers converted the device into an ordinary transistor. Because the process is reversible, the researchers could compare collector characteristics when the device was functioning as a normal transistor and when it was functioning as a transistor laser, something that was never before possible. ...

Read the whole article: http://www.physorg.com/news63548707.html

Source: University of Illinois at Urbana-Champaign

 
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